Product Details:
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Other Name: | Super Fast Recovery Diode | Polarity: | Cathode Band |
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Mounting Position: | Any | Weight: | 0.3grams (approx) |
Average Forward Current: | 1A | Non-repetitive Peak Current: | 30A |
High Light: | ultra fast recovery diode,surface mount rectifier diode |
BA159 fast recovery silicon rectifier diode 1.0A 1000V for LED driver
Description:
Ultra Fast Recovery Rectifier Diode is a semiconductor device which possesses short reverse recovery time for rectification purpose at high frequency. A quick recovery time is crucial for rectification of high-frequency AC signal. Diodes are mostly used in rectifiers because they possess ultra-high switching speed.
The fast recovery diode is constructed in the similar manner by which ordinary diode is constructed. The major difference in construction between these diodes and conventional diodes is the presence of recombination centres. In fast recovery diodes, Gold (Au) is added to the semiconductor material. This leads to augmentation in the numerical value of recombination centres due to which the lifetime (?) of charge carriers decreases.
Features:
• Diffused junction
• Fast switching for high efficiency
• High current capability and low forward voltage drop
• Surge overload rating to 30A peak
• Low reverse leakage current
• Plastic material has UL flammability classification 94V-0
Advantages of Fast Recovery Diode:
• Ultrahigh Switching Speed
• Low reverse recovery time
• Improved efficiency as compared to conventional diodes.
• Reduced loss
Maximum Ratings & Thermal Characteristics:
Rating at 25℃ ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.
For Capacitive load derate current by 20%.
Parameter | Symbol | BA159 | Unit |
Max.repetitive peak reverse voltage | VRRM | 1000 | V |
Max. RMS bridge input voltage | VRMS | 700 | V |
Max. DC blocking voltage | VDC | 1000 | V |
Max. average forward rectified output current at TA=75℃ | IF(AV) | 1.0 | A |
Peak forward surge current single sine-wave superimposed on rated load | IFSM | 30 | A |
Maximum reverse recovery time TJ=25℃ | Trr | 500 | nS |
Typical thermal resistance per element | ReJA | 50 | ℃/W |
Typical junction capacitance per element | Cj | 15 | pF |
Operating junction and storage temperature range |
Tj TSTG |
-65 to +150 | ℃ |
Electrical Characteristics:
Rating at 25℃ ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.
For Capacitive load derate by 20 %.
Parameter | Symbol | BA159 | Unit |
Max. instantaneous forward voltage drop per leg at 1.0A | VF | 1.3 | V |
Max. DC reverse current at rated TA=25℃ DC blocking voltage per element TA=25℃ |
IR |
5.0 50.0 |
mA |
Dimension:
Contact Person: Mr. Roy Zhang
Tel: 86 574 56807757
Fax: 86-574-55844980