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Product Details:
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| Other Name: | Bridge Rectifier Diode | Isolation Voltage: | 2500V |
|---|---|---|---|
| IFSM: | 400A | IR: | 5μA |
| Vf: | 1.10V | Tjmax.: | 150℃ |
| IF(AV): | 35A | VRRM: | 1000V |
| Highlight: | single phase bridge rectifier,bridge type rectifier |
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Glass passivated single-phase diode bridge rectifier 35A 1000V KBJ3510
Description:
Bridge rectifier is a type of full wave rectifier which uses four or more diodes in a bridge circuit configuration to efficiently convert the Alternating Current (AC) into Direct Current (DC).
Single-phase bridge rectifier is the most frequently-used circuit for electronic dc power supplies. It requires four diodes but the transformer used is not center-tapped and has a maximum voltage of VSM. The full-wave bridge-rectifier is available in three distinct physics forms. The main advantage of this bridge circuit is that it does not require a special centre tapped transformer, thereby reducing its size and cost. The single secondary winding is connected to one side of the diode bridge network and the load to the other side
Features:
• Typical IR less than 2.0μA
• High surge current capability
• Low thermal resistance
• Compliant to RoHS
• Isolation voltage up to 2500V
Typical applications:
General purpose use in AC/DC bridge full wave rectification for big power supply, field supply for DC motor, industrial automation applications.
Advantage:
• International standard package
Epoxy meets UL 94V-0 flammability rating
• Small volume, light weight
• Small thermal resistance
• High heat-conduction rate
• Low temperature rise
• weight: 10g
Major ratings and characteristics(TA=25℃ unless otherwise noted)
| Parameter | Symbol | KBJ3510 | Unit |
| Max. repetitive peak reverse voltage | VRRM | 1000 | V |
| Peak reverse non-repetitive voltage | VRSM | 1100 | V |
| Max. DC blocking voltage | VDC | 1000 | V |
| Max. average forward rectified output current | IF(AV) | 35 | A |
| Peak forward surge current single sine-wave superimposed on rated load | IFSM | 400 | A |
| Rating(non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing | I2t | 660 | A2S |
| RMS isolation voltage from case to leads | VISO | 2500 | V |
| Operating junction storage temperature range | TJ | -40~150 | ℃ |
| Storage temperature range | TSTG | -40~125 | ℃ |
Electrical characteristics(TA=25℃ unless otherwise noted)
| Parameter | Test conditions | Symbol | KBJ3510 | Unit |
| Max. instantaneous forward drop per diode | IF=17.5A | VF | 1.10 | V |
| Max. reverse DC current at rated DC blocking voltage per diode | TA=25℃ | IR | 5 | μA |
| TA=150℃ | 500 |
Thermal and mechanicac(TA=25℃ unless otherwise noted)
| Parameter | Test conditions | Symbol | KBJ3510 | Unit |
| Typical thermal resistance junction to case | Single-side heat dissipation, sine half wave | RθJC(1) | 1.0 | ℃/W |
| Mounting torque to heatrisk M3±10% | A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound | 2.5 | Nm | |
| Approximate weight | 10 | g |
Dimension:(mm)
Contact Person: Mr. Roy Zhang
Tel: 86 574 55878090
Fax: 86-574-55878097
